发明授权
- 专利标题： Method of reducing film stress on overlay mark
- 专利标题（中）： 降低覆膜标记膜应力的方法
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申请号： US10833206申请日： 2004-04-26
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公开(公告)号： US07196429B2公开(公告)日： 2007-03-27
- 发明人: Yu-Lin Yen , Ching-Yu Chang
- 申请人： Yu-Lin Yen , Ching-Yu Chang
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Stout, Uxa, Buyan & Mullins, LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L23/544
摘要：
An integrated circuit capable of operating despite a profile shift is disclosed. Overlay marks on the integrated circuit are surrounded by a trench that tends to relieve the effect of a profile shift caused by stress applied to the integrated circuit. The position of the overlay marks tends, therefore, not to be affected by the stress.
公开/授权文献
- US20050236721A1 Method of reducing film stress on overlay mark 公开/授权日：2005-10-27
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