发明授权
- 专利标题： DMOS device with a programmable threshold voltage
- 专利标题（中）： 具有可编程阈值电压的DMOS器件
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申请号： US11104088申请日： 2005-04-12
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公开(公告)号： US07199427B2公开(公告)日： 2007-04-03
- 发明人: Richard A. Blanchard
- 申请人： Richard A. Blanchard
- 申请人地址： US NY Melville
- 专利权人： General Semiconductor, Inc.
- 当前专利权人： General Semiconductor, Inc.
- 当前专利权人地址： US NY Melville
- 代理机构： Mayer & Williams PC
- 代理商 Karin L. Williams, Esq.; David B. Bonham, Esq.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A DMOS device is provided which is equipped with a floating gate having a first and second electrode in close proximity thereto. The floating gate is separated from one of the first and second electrodes by a thin layer of dielectric material whose dimensions and composition permit charge carriers to tunnel through the dielectric layer either to or from the floating gate. This tunneling phenomenon can be used to create a threshold voltage that may be adjusted to provide a precise current by placing a voltage between a programming electrode and the body/source and gate electrode of the device.
公开/授权文献
- US20050189586A1 DMOS device with a programmable threshold voltage 公开/授权日：2005-09-01
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