发明授权
- 专利标题: Semiconductor device testing method and testing equipment
- 专利标题(中): 半导体器件测试方法和测试设备
-
申请号: US11078352申请日: 2005-03-14
-
公开(公告)号: US07199600B2公开(公告)日: 2007-04-03
- 发明人: Hitoshi Izuru , Kazuhiro Tashiro
- 申请人: Hitoshi Izuru , Kazuhiro Tashiro
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- 优先权: JP2004-270680 20040917
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A burn-in testing method to perform tests with a semiconductor device operated in an atmosphere at a prescribed temperature characterized in that operation instruction signals instructing an operation of the semiconductor device are repeatedly supplied while supplying power to the semiconductor device, and increases and decreases in a power supply current corresponding to the operation instruction signals are counted.