Invention Grant
- Patent Title: Bi-directional double NMOS switch
- Patent Title (中): 双向双NMOS开关
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Application No.: US10532922Application Date: 2003-09-22
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Publication No.: US07199640B2Publication Date: 2007-04-03
- Inventor: Guillaume De Cremoux , Insun Van Loo , Jan Dikken , Ferry Nieuwhoff , Yovgos Christoforou , Aykut Kenc , Wilhelmus Johannes Remigius Willemsen
- Applicant: Guillaume De Cremoux , Insun Van Loo , Jan Dikken , Ferry Nieuwhoff , Yovgos Christoforou , Aykut Kenc , Wilhelmus Johannes Remigius Willemsen
- Applicant Address: NL Eindhoven
- Assignee: DXP B.V.
- Current Assignee: DXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Peter Zawilski
- Priority: EP02079526 20021029
- International Application: PCT/IB03/04234 WO 20030922
- International Announcement: WO2004/040761 WO 20040513
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition, advantageously, a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.
Public/Granted literature
- US20060043499A1 Bi-directional double nmos switch Public/Granted day:2006-03-02
Information query
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