公开(公告)号：US20060043499A1

公开(公告)日：2006-03-02

申请号：US10532922

申请日：2003-09-22

申请人： Guillaume De Cremoux ,  Insun Van Loo ,  Jan Dikken ,  Ferry Nieuwhoff ,  Yovgos Christoforou ,  Aykut Kenc ,  Wilhelmusn Johannes Willemsen

发明人： Guillaume De Cremoux ,  Insun Van Loo ,  Jan Dikken ,  Ferry Nieuwhoff ,  Yovgos Christoforou ,  Aykut Kenc ,  Wilhelmusn Johannes Willemsen

IPC分类号： H01L29/76

CPC分类号： H03K17/6874 ,  H03K17/063

摘要： A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition advantageously a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.

摘要翻译： 半导体开关包括以反串联方式耦合的两个NMOS晶体管，以及耦合到NMOS晶体管的两个栅极的栅极控制电路。 NMOS晶体管的两个漏极互连，并且栅极控制电路耦合到漏极互连。 与现有技术的开关相比，所需的芯片面积减半。 将栅极泵入较高电压可能会导致NMOS晶体管的尺寸进一步减小。 另外有利的是，可以在NMOS晶体管的源极之间允许大范围的输入和输出电压，由此源分别用作开关的输入和输出，从而允许开关在广泛的技术领域中应用。

公开(公告)号：US07199640B2

公开(公告)日：2007-04-03

申请号：US10532922

申请日：2003-09-22

申请人： Guillaume De Cremoux ,  Insun Van Loo ,  Jan Dikken ,  Ferry Nieuwhoff ,  Yovgos Christoforou ,  Aykut Kenc ,  Wilhelmus Johannes Remigius Willemsen

发明人： Guillaume De Cremoux ,  Insun Van Loo ,  Jan Dikken ,  Ferry Nieuwhoff ,  Yovgos Christoforou ,  Aykut Kenc ,  Wilhelmus Johannes Remigius Willemsen

IPC分类号： H03K17/687

CPC分类号： H03K17/6874 ,  H03K17/063

摘要： A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition, advantageously, a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.

摘要翻译： 半导体开关包括以反串联方式耦合的两个NMOS晶体管，以及耦合到NMOS晶体管的两个栅极的栅极控制电路。 NMOS晶体管的两个漏极互连，并且栅极控制电路耦合到漏极互连。 与现有技术的开关相比，所需的芯片面积减半。 将栅极泵入较高电压可能会导致NMOS晶体管的尺寸进一步减小。 此外，有利的是，可以在NMOS晶体管的源极之间允许大范围的输入和输出电压，由此源分别用作开关的输入和输出，从而允许开关在广泛的技术领域中应用。