A technique implements high impedance nodes using high threshold voltage devices that may generate less leakage current and may have a higher gate oxide breakdown voltage than standard devices in a particular manufacturing technology. Under at least one operating condition, for a particular power supply voltage, a circuit may unable to produce a control signal that is sufficient to turn on such a high threshold voltage device. The technique adjusts the control signal voltage to provide a gate-to-source voltage sufficient to turn on the high threshold voltage device. At another power supply voltage, when the circuit is able to produce a control signal sufficient to turn on the high threshold voltage device, the technique does not adjust the control signal.