Invention Grant
- Patent Title: Dual gate cascade amplifier
- Patent Title (中): 双门级联放大器
-
Application No.: US10956082Application Date: 2004-10-04
-
Publication No.: US07199669B2Publication Date: 2007-04-03
- Inventor: Sung-jae Jung , Hoon-tae Kim , Yun-seong Eo , Kwang-du Lee , Sang-yoon Jeon
- Applicant: Sung-jae Jung , Hoon-tae Kim , Yun-seong Eo , Kwang-du Lee , Sang-yoon Jeon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0068610 20031002
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.
Public/Granted literature
- US20050073366A1 Dual gate cascade amplifier Public/Granted day:2005-04-07
Information query