Methods and apparatus are provided for harnessing the effects of process variations in a semiconductor device. In one example, implementing an electronic design based on collected performance parameters is provided. In general, a core is segmented into multiple core regions. A performance parameter can be collected from each of the core regions. The performance parameter can be collected with a performance measuring mechanism associated with the core region. The performance parameter can be correlated to the performance requirements of an electronic device portion, and the electronic design portion can be implemented in a core region that has a performance parameter matched to the needs of the electronic design portion. In this way, process variation effects are harnessed by optimizing the implementation of the electronic design in regions of the semiconductor device best suited the needs of each electronic design portion. Therefore, performance/power optimization of the semiconductor device can be realized.