发明授权
US07202503B2 III-V and II-VI compounds as template materials for growing germanium containing film on silicon
有权
III-V和II-VI化合物作为在硅上生长含锗膜的模板材料
- 专利标题： III-V and II-VI compounds as template materials for growing germanium containing film on silicon
- 专利标题（中）： III-V和II-VI化合物作为在硅上生长含锗膜的模板材料
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申请号： US10883295申请日： 2004-06-30
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公开(公告)号： US07202503B2公开(公告)日： 2007-04-10
- 发明人: Loren Chow , Mohamad Shaheen
- 申请人： Loren Chow , Mohamad Shaheen
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/22
- IPC分类号： H01L29/22 ; H01L29/06 ; H01L31/0328
摘要：
An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant formed on the intermediate layer. The intermediate layer comprises one of a combination of III–V elements and a combination of II–VI elements. The second lattice constant has a value that is approximately between the values of the first lattice constant and the third lattice constant.