Invention Grant
US07208203B2 Method for forming metal oxide film and method for forming secondary electron emission film in gas discharge tube
失效
用于形成金属氧化物膜的方法和在气体放电管中形成二次电子发射膜的方法
- Patent Title: Method for forming metal oxide film and method for forming secondary electron emission film in gas discharge tube
- Patent Title (中): 用于形成金属氧化物膜的方法和在气体放电管中形成二次电子发射膜的方法
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Application No.: US10642271Application Date: 2003-08-18
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Publication No.: US07208203B2Publication Date: 2007-04-24
- Inventor: Hitoshi Yamada , Akira Tokai , Manabu Ishimoto , Akira Nakazawa , Kenji Awamoto , Tsutae Shinoda
- Applicant: Hitoshi Yamada , Akira Tokai , Manabu Ishimoto , Akira Nakazawa , Kenji Awamoto , Tsutae Shinoda
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP.
- Priority: JP2002-238403 20020819
- Main IPC: B05D7/22
- IPC: B05D7/22 ; B05D3/06 ; B05D3/02 ; B05D3/10 ; B05D5/12
Abstract:
According to the present invention, there is provided a method for forming a metal oxide film comprising, when a metal oxide film is formed by conducting a thermal treatment on a coating film containing an organic metal compound formed on an inner wall of a tube, performing an ultraviolet irradiation treatment or an ozone treatment on the coating film prior to or simultaneously with the thermal treatment.
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