Invention Grant
US07208260B2 Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
有权
用于光致抗蚀剂的交联单体,以及使用其制备光致抗蚀剂聚合物的方法
- Patent Title: Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
- Patent Title (中): 用于光致抗蚀剂的交联单体,以及使用其制备光致抗蚀剂聚合物的方法
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Application No.: US10080507Application Date: 2002-02-22
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Publication No.: US07208260B2Publication Date: 2007-04-24
- Inventor: Jae Chang Jung , Keun Kyu Kong , Min Ho Jung , Geun Su Lee , Ki Ho Balk
- Applicant: Jae Chang Jung , Keun Kyu Kong , Min Ho Jung , Geun Su Lee , Ki Ho Balk
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR98-63793 19981231
- Main IPC: G03C1/73
- IPC: G03C1/73 ; G03F7/038 ; G03F7/039 ; G03F7/30 ; C08F232/00

Abstract:
The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.
Public/Granted literature
- US20020177069A1 Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same Public/Granted day:2002-11-28
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