发明授权
- 专利标题： Sealing sidewall pores in low-k dielectrics
- 专利标题（中）： 密封低k电介质中的侧壁孔
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申请号： US10728774申请日： 2003-12-08
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公开(公告)号： US07208418B1公开(公告)日： 2007-04-24
- 发明人: Lynne A. Okada , Minh Quoc Tran , Fei Wang , Lu You
- 申请人： Lynne A. Okada , Minh Quoc Tran , Fei Wang , Lu You
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall porosity by depositing a swelling agent, adhesion promoter or an additional layer of low-k material.
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