发明授权
US07209214B2 Lithographic apparatus focus test method and system, and device manufacturing method
失效
光刻设备聚焦测试方法和系统,以及器件制造方法
- 专利标题: Lithographic apparatus focus test method and system, and device manufacturing method
- 专利标题(中): 光刻设备聚焦测试方法和系统,以及器件制造方法
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申请号: US11017230申请日: 2004-12-21
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公开(公告)号: US07209214B2公开(公告)日: 2007-04-24
- 发明人: Jan Hauschild , Marco Pieters , Coen Van De Vin
- 申请人: Jan Hauschild , Marco Pieters , Coen Van De Vin
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman, LLP
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G03B27/52
摘要:
A method and system for performing a focus test in a lithographic apparatus. According to the method, a substrate is provided with a layer of radiation sensitive material, the substrate is illuminated in the lithographic apparatus using a first focus sensitive feature and a second focus feature, and the substrate is analyzed to provide results of the focus test using the first focus sensitive feature as imaged on the substrate. The focus test is performed on a regular production wafer, and the results of the focus test are allowed if predetermined statistic properties associated with the second focus feature as imaged on the substrate are within predetermined limits. The second focus feature may be focus sensitive or focus insensitive.
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