Invention Grant
- Patent Title: Method for manufacturing magneto-resistive random access memory
- Patent Title (中): 制造磁阻随机存取存储器的方法
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Application No.: US10950584Application Date: 2004-09-28
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Publication No.: US07220599B2Publication Date: 2007-05-22
- Inventor: Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
- Applicant: Wan-jun Park , Taek-dong Lee , Byeong-kook Park , Tae-wan Kim , I-hun Song , Sang-jin Park
- Applicant Address: KR Suwon, Kyungki-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon, Kyungki-do
- Agency: Lee & Morse, P.C.
- Priority: KR2002-29956 20020529
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/76

Abstract:
A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.
Public/Granted literature
- US20050036399A1 Magneto-resistive random access memory and method for manufacturing the same Public/Granted day:2005-02-17
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