公开(公告)号：US06815784B2

公开(公告)日：2004-11-09

申请号：US10445828

申请日：2003-05-28

申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC分类号： H01L2982

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

公开(公告)号：US07220599B2

公开(公告)日：2007-05-22

申请号：US10950584

申请日：2004-09-28

申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

公开(公告)号：US06777077B2

公开(公告)日：2004-08-17

申请号：US10038604

申请日：2002-01-08

申请人： Kyung-jin Lee ,  Taek-dong Lee ,  In-seon Lee ,  Min-sik Hwang

发明人： Kyung-jin Lee ,  Taek-dong Lee ,  In-seon Lee ,  Min-sik Hwang

IPC分类号： G11B566

CPC分类号： G11B5/64 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12854 ,  Y10T428/265

摘要： A perpendicular magnetic recording medium is provided. The perpendicular magnetic recording medium has an underlayer for leading perpendicular orientation of a perpendicular magnetic recording layer, stacked between a substrate and the perpendicular magnetic recording layer, and thickness of the perpendicular magnetic recording layer is controlled within the range of 5-40 nm to have a negative nucleation field.

摘要翻译： 提供垂直磁记录介质。 垂直磁记录介质具有用于引导垂直磁记录层的垂直定向的底层，堆叠在基板和垂直磁记录层之间，垂直磁记录层的厚度被控制在5-40nm范围内以具有 负成核场。

公开(公告)号：US06228515B1

公开(公告)日：2001-05-08

申请号：US09175475

申请日：1998-10-20

申请人： Kyung-Ho Shin ,  Taek-Dong Lee ,  Soo-Youl Hong

发明人： Kyung-Ho Shin ,  Taek-Dong Lee ,  Soo-Youl Hong

IPC分类号： G11B564

CPC分类号： G11B5/732 ,  G11B5/7325

摘要： The present invention relates to an underlayer for use in a high density magnetic recording media. More particularly, the invention relates to an underlayer for use in a high density magnetic recording media comprising A1Pd or CoTi intermetallic compound having B2 crystal structure, or Co50Ti50-xMxmetal alloy in which Ti in CoTi intermetallic compound is partly substituted by other substitutional elements while maintaining its B2 crystal structure, or CoTi/Cr of a double thin film structure in which a Cr seed layer is introduced. The underlayer provided by the present invention has a crystal structure and microstructure suitable for a high density magnetic recording media, which makes a good texture structure with a Co-based magnetic layer deposited thereon and shows fine grain size distribution, high coercity and high coercity squareness.

摘要翻译： 本发明涉及一种用于高密度磁记录介质的底层。 更具体地说，本发明涉及一种用于包含具有B2晶体结构的AlPd或CoTi金属间化合物的高密度磁记录介质的底层，或CoTiTi-xM x金属合金，其中CoTi金属间化合物中的Ti部分地被其它取代元素取代，同时保持 其B2晶体结构，或其中引入Cr种子层的双重薄膜结构的CoTi / Cr。由本发明提供的底层具有适合于高密度磁记录介质的晶体结构和微结构，这使得良好 纹理结构，其上沉积有Co基磁性层，并显示出细小的粒度分布，高强度和高强度矩形度。

公开(公告)号：US20110149647A1

公开(公告)日：2011-06-23

申请号：US12926442

申请日：2010-11-18

申请人： Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

发明人： Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

IPC分类号： G11C11/14 ,  H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer.

摘要翻译： 提供垂直磁性隧道结（MTJ），包括该垂直磁性隧道结（MTJ）的磁性装置以及制造MTJ的方法，垂直MTJ包括下部磁性层; 下层磁性层上的隧道层; 和隧道层上的上层磁性层。 上下磁性层中的一个包括具有垂直磁各向异性的自由磁性层，其中自由磁性层的磁化方向由自旋极化电流改变。 极化增强层（PEL）和交换阻挡层（EBL）堆叠在隧穿层和自由磁性层之间。

公开(公告)号：US20090068500A1

公开(公告)日：2009-03-12

申请号：US12061823

申请日：2008-04-03

申请人： Sok-hyun KONG ,  Sang-hwan PARK ,  Hoo-san LEE ,  Taek-dong LEE ,  Hoon-sang OH

发明人： Sok-hyun KONG ,  Sang-hwan PARK ,  Hoo-san LEE ,  Taek-dong LEE ,  Hoon-sang OH

IPC分类号： G11B5/706 ,  B05D5/12 ,  C23C14/34

CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/667 ,  G11B5/7325 ,  G11B5/851

摘要： Provided are a perpendicular magnetic recording medium and a method of manufacturing the same. The perpendicular magnetic recording medium includes: a substrate; a soft magnetic layer formed on the substrate; an underlayer formed on the soft magnetic layer; and a recording layer comprising a plurality of ferromagnetic layers and formed on the underlayer, wherein each of the plurality of ferromagnetic layers has a magnetic anisotropic energy which decreases as distance increases from the underlayer.

摘要翻译： 提供了一种垂直磁记录介质及其制造方法。 垂直磁记录介质包括：基板; 形成在所述基板上的软磁性层; 形成在软磁性层上的底层; 以及包括多个铁磁层并形成在所述底层上的记录层，其中所述多个铁磁层中的每一个具有随距离从所述底层距离增加而减小的磁各向异性能量。

公开(公告)号：US20070196697A1

公开(公告)日：2007-08-23

申请号：US11581326

申请日：2006-10-17

申请人： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

发明人： Taek-dong Lee ,  Young-wook Tahk ,  Sung-chul Lee

IPC分类号： G11B5/66

CPC分类号： G11B5/667 ,  G11B5/7325

摘要： A perpendicular magnetic recording medium is provided, the perpendicular magnetic recording medium including: a substrate; a first soft magnetic underlayer formed on the substrate; a perpendicular anisotropic middle layer that is formed on the first soft magnetic underlayer and has perpendicular magnetic anisotropy; a second soft magnetic underlayer formed on the perpendicular anisotropic middle layer; and a perpendicular magnetic recording layer formed on the second soft magnetic underlayer.

摘要翻译： 提供垂直磁记录介质，垂直磁记录介质包括：基板; 形成在所述基板上的第一软磁性底层; 垂直各向异性中间层，形成在第一软磁性底层上，具有垂直的磁各向异性; 形成在垂直各向异性中间层上的第二软磁性底层; 以及形成在第二软磁性底层上的垂直磁记录层。

公开(公告)号：US20050036399A1

公开(公告)日：2005-02-17

申请号：US10950584

申请日：2004-09-28

申请人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

发明人： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/34 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

摘要翻译： 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。