发明授权
- 专利标题： Method of forming high voltage devices with retrograde well
- 专利标题（中）： 用逆行井形成高压装置的方法
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申请号： US10877450申请日： 2004-06-25
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公开(公告)号： US07221021B2公开(公告)日： 2007-05-22
- 发明人: Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
- 申请人： Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Duane Morris LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/00
摘要：
A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the surface of the substrate, thereby minimizing damages to the gate region.
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