Invention Grant
- Patent Title: Semiconductor device and semiconductor memory using the same
- Patent Title (中): 半导体器件和使用其的半导体存储器
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Application No.: US11236629Application Date: 2005-09-28
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Publication No.: US07221029B2Publication Date: 2007-05-22
- Inventor: Takashi Miida
- Applicant: Takashi Miida
- Applicant Address: JP Kanagawa
- Assignee: Innotech Corporation
- Current Assignee: Innotech Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2002-89744 20020327; JP2003-36005 20030214
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A cell transistor includes source/drain regions formed at a lower level than part of its channel region. A select transistor has a channel region and source/drain regions formed at substantially the same level as the source/drain regions of the cell transistor. One of the source/drain regions of the cell transistor and one of the source/drain regions of the select transistor are electrically interconnected to each other in substantially the same plane.
Public/Granted literature
- US20060027857A1 Semiconductor device and semiconductor memory using the same Public/Granted day:2006-02-09
Information query
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