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US07221029B2 Semiconductor device and semiconductor memory using the same 失效
半导体器件和使用其的半导体存储器

Semiconductor device and semiconductor memory using the same
Abstract:
A cell transistor includes source/drain regions formed at a lower level than part of its channel region. A select transistor has a channel region and source/drain regions formed at substantially the same level as the source/drain regions of the cell transistor. One of the source/drain regions of the cell transistor and one of the source/drain regions of the select transistor are electrically interconnected to each other in substantially the same plane.
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