- 专利标题: Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
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申请号: US10663671申请日: 2003-09-17
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公开(公告)号: US07223306B2公开(公告)日: 2007-05-29
- 发明人: Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
- 申请人: Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2002-269655 20020917
- 主分类号: C30B25/12
- IPC分类号: C30B25/12 ; C30B25/14
摘要:
It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.
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