发明授权
US07223321B1 Faraday shield disposed within an inductively coupled plasma etching apparatus
有权
设置在电感耦合等离子体蚀刻装置内的法拉第屏蔽
- 专利标题: Faraday shield disposed within an inductively coupled plasma etching apparatus
- 专利标题(中): 设置在电感耦合等离子体蚀刻装置内的法拉第屏蔽
-
申请号: US10232564申请日: 2002-08-30
-
公开(公告)号: US07223321B1公开(公告)日: 2007-05-29
- 发明人: Keith Comendant , Robert J. Steger
- 申请人: Keith Comendant , Robert J. Steger
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Martine Penilla & Gencarella, LLP
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01L21/306
摘要:
An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.
信息查询
IPC分类: