发明授权
US07223321B1 Faraday shield disposed within an inductively coupled plasma etching apparatus 有权
设置在电感耦合等离子体蚀刻装置内的法拉第屏蔽

Faraday shield disposed within an inductively coupled plasma etching apparatus
摘要:
An apparatus and method is provided for positioning and utilizing a Faraday shield in direct exposure to a plasma within an inductively coupled plasma etching apparatus. Broadly speaking, the Faraday shield configuration maintains a condition of an etching chamber window. At a minimum, positioning the Faraday shield between the window and the plasma prevents erosion of the window resulting from plasma sputter and shunts heat generated by an etching process away from the window.
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