Semiconductor wafer and manufacturing method thereof

Invention Grant

US07224031B2 Semiconductor wafer and manufacturing method thereof 失效

Title translation: 半导体晶片及其制造方法

Please log in to see more content

Patent Title: Semiconductor wafer and manufacturing method thereof
Patent Title (中): 半导体晶片及其制造方法
Application No.: US11029648

Application Date: 2005-01-06
Publication No.: US07224031B2

Publication Date: 2007-05-29
Inventor: Hiroaki Uchida
Applicant: Hiroaki Uchida
Applicant Address: JP Tokyo
Assignee: Oki Electric Industry Co., Ltd.
Current Assignee: Oki Electric Industry Co., Ltd.
Current Assignee Address: JP Tokyo
Agency: Rabin & Berdo, P.C.
Priority: JP2004-001271 20040106; JP2004-123638 20040420
Main IPC: H01L29/786
IPC: H01L29/786

Semiconductor wafer and manufacturing method thereof

Abstract:

The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.

Abstract(Chinese):

本发明提供了一种半导体晶片，其包括半导体的蓝宝石等的绝缘板，其在其周边部分设置有定位取向平面，以及形成在绝缘板的整个表面上的硅薄膜。在半导体晶片中，将离子注入到在硅薄膜的周边部分包含定向平面的区域中以将硅非晶硅化。因此，消除了非晶化点处的半透明度，并且可以执行使用常规光学传感器的精确定位。

Public/Granted literature

US20050176208A1 Semiconductor wafer and manufacturing method thereof Public/Granted day:2005-08-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管