Invention Grant
- Patent Title: Megasonic immersion lithography exposure apparatus and method
- Patent Title (中): 超声波浸没式光刻曝光装置及方法
-
Application No.: US10910480Application Date: 2004-08-03
-
Publication No.: US07224427B2Publication Date: 2007-05-29
- Inventor: Ching-Yu Chang , Chien-Hung Lin , Chin-Hsiang Lin , David Lu , Horng-Huei Tseng , Burn-Jeng Lin
- Applicant: Ching-Yu Chang , Chien-Hung Lin , Chin-Hsiang Lin , David Lu , Horng-Huei Tseng , Burn-Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/52
- IPC: G03B27/52

Abstract:
A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.
Public/Granted literature
- US20060028626A1 Megasonic immersion lithography exposure apparatus and method Public/Granted day:2006-02-09
Information query