发明授权
US07229843B2 Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device
有权
用于监控工艺废气的装置和方法，半导体制造装置以及用于控制半导体制造装置的系统和方法
- 专利标题： Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device
- 专利标题（中）： 用于监控工艺废气的装置和方法，半导体制造装置以及用于控制半导体制造装置的系统和方法
-
申请号： US11062470申请日： 2005-02-22
-
公开(公告)号： US07229843B2公开(公告)日： 2007-06-12
- 发明人: Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
- 申请人： Kiyoshi Komiyama , Takahiro Shimoda , Hiroshi Nishikawa
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Pillsbury Winthrop Shaw Pittman, LLP
- 优先权： JP11-303534 19991026; JP2000-297203 20000928
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.
公开/授权文献
信息查询
IPC分类:
