Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device
    1.
    发明授权
    Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device 有权
    用于监控工艺废气的装置和方法,半导体制造装置以及用于控制半导体制造装置的系统和方法

    公开(公告)号:US06942891B2

    公开(公告)日:2005-09-13

    申请号:US10760581

    申请日:2004-01-21

    CPC classification number: C23C16/52 C23C16/44 C23C16/4412

    Abstract: Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.

    Abstract translation: 对工艺废气进行采样,并通过傅里叶变换红外分光仪(FT-IR)(26)分析工艺废气的成分。 将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。 如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量,则输出指示处理误差的信号。 代替输出指示过程错误的信号,可以自动调整过程条件。

    Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device
    2.
    发明授权
    Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device 有权
    用于监控工艺废气的装置和方法,半导体制造装置以及用于控制半导体制造装置的系统和方法

    公开(公告)号:US07229843B2

    公开(公告)日:2007-06-12

    申请号:US11062470

    申请日:2005-02-22

    CPC classification number: C23C16/52 C23C16/44 C23C16/4412

    Abstract: Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.

    Abstract translation: 对工艺废气进行采样,并通过傅里叶变换红外分光仪(FT-IR)(26)分析工艺废气的成分。 将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。 如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量,则输出指示处理误差的信号。 代替输出指示过程错误的信号,可以自动调整过程条件。

    Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device
    4.
    发明授权
    Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device 有权
    用于监控工艺废气的方法和装置,半导体制造装置以及用于管理半导体制造装置的方法和系统

    公开(公告)号:US06716477B1

    公开(公告)日:2004-04-06

    申请号:US10111481

    申请日:2002-04-25

    CPC classification number: C23C16/52 C23C16/44 C23C16/4412

    Abstract: Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) (26). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.

    Abstract translation: 对工艺废气进行采样,并通过傅里叶变换红外分光仪(FT-IR)(26)分析工艺废气的成分。 将分析结果与通过在参考工艺条件下执行的操作中产生的工艺废气的分析获得的参考分析结果进行比较。 如果气体组分的量变化到围绕从参考分析结果获得的参考值设定的预定范围之外的量,则输出指示处理误差的信号。 代替输出指示过程错误的信号,可以自动调整过程条件。

    Processing apparatus for substrates to be processed
    5.
    发明授权
    Processing apparatus for substrates to be processed 失效
    待处理基板的处理装置

    公开(公告)号:US5704981A

    公开(公告)日:1998-01-06

    申请号:US626454

    申请日:1996-04-02

    CPC classification number: C23C16/45565 C23C16/455 C23C16/45578

    Abstract: A partition member with a buffer plate disposed on the top surface thereof is disposed in a region belonging to a surface-to-be-processed of a substrate-to-be-processed held in a processing apparatus. An injector having cross-sectional areas decreasing toward the forward end thereof is disposed in the partition member. The injector has a number of injection holes formed length-wise therein at a constant pitch and in the same bore, whereby a processing gas can be injected very uniformly in the longitudinal direction and diffuse in the partition member. Then the processing gas is passed through vent holes formed in the buffer plate uniformly into the processing chamber. The processing gas can be fed uniformly onto the surface-to-be-processed of the substrate-to-be-processed, and a deposited thin film can have high intra-surface thickness uniformity.

    Abstract translation: 具有设置在其顶表面上的缓冲板的分隔构件设置在属于处理装置中保持的待处理基板的表面处理区域中。 具有朝向其前端减小的截面积的喷射器设置在分隔构件中。 喷射器具有一定数量的注入孔,其中以恒定的间距和相同的孔形成在其中,从而可以在纵向方向上非常均匀地注入处理气体并且在分隔构件中扩散。 然后将处理气体均匀地通过形成在缓冲板中的通气孔进入处理室。 可以将处理气体均匀地供给到被处理基板的待表面处理,并且沉积的薄膜可以具有高的表面内厚度均匀性。

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