Invention Grant
- Patent Title: Methods for fabricating a germanium on insulator wafer
- Patent Title (中): 锗绝缘体晶圆的制造方法
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Application No.: US11029808Application Date: 2005-01-04
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Publication No.: US07229898B2Publication Date: 2007-06-12
- Inventor: Konstantin Bourdelle , Fabrice Letertre , Bruce Faure , Christophe Morales , Chrystel Deguet
- Applicant: Konstantin Bourdelle , Fabrice Letertre , Bruce Faure , Christophe Morales , Chrystel Deguet
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies S.A.
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: EP04292742 20041119
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
Improved fabrication processes for manufacturing GeOI type wafers are disclosed. In an implementation, a method for fabricating a germanium on insulator wafer includes providing a source substrate having a surface, at least a layer of germanium and a weakened area. The weakened area is located at a predetermined depth in the germanium layer of the source substrate and is generally parallel to the source substrate surface. The technique also includes providing a germanium oxynitride layer in or on the source substrate, bonding the source substrate surface to a handle substrate to form a source-handle structure, and detaching the source substrate from the source-handle structure at the weakened area of the source substrate to create the germanium on insulator wafer having, as a surface, a useful layer of germanium.
Public/Granted literature
- US20060110899A1 Methods for fabricating a germanium on insulator wafer Public/Granted day:2006-05-25
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