发明授权
- 专利标题： Polycrystalline silicon layer with nano-grain structure and method of manufacture
- 专利标题（中）： 具有纳米晶粒结构的多晶硅层及其制造方法
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申请号： US10707878申请日： 2004-01-20
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公开(公告)号： US07232774B2公开(公告)日： 2007-06-19
- 发明人: Ashima B. Chakravarti , Bruce B. Doris , Romany Ghali , Oleg G. Gluschenkov , Michael A. Gribelyuk , Woo-Hyeong Lee , Anita Madan
- 申请人： Ashima B. Chakravarti , Bruce B. Doris , Romany Ghali , Oleg G. Gluschenkov , Michael A. Gribelyuk , Woo-Hyeong Lee , Anita Madan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Ira D. Blecker
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.
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