Invention Grant
- Patent Title: Non-volatile memory and method of manufacturing floating gate
- Patent Title (中): 非易失性存储器和制造浮栅的方法
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Application No.: US11461780Application Date: 2006-08-02
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Publication No.: US07235443B2Publication Date: 2007-06-26
- Inventor: Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
- Applicant: Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
- Applicant Address: TW Kaohsiung
- Assignee: National Sun Yat-sen University
- Current Assignee: National Sun Yat-sen University
- Current Assignee Address: TW Kaohsiung
- Agency: Jianq Chyun IP Office
- Priority: TW92130674A 20031103; TW93118989A 20040629
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.
Public/Granted literature
- US20060270158A1 NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING FLOATING GATE Public/Granted day:2006-11-30
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