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    THIN FILM TRANSISTOR AND METHOD OF MAKING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MAKING THE SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20060124930A1

    公开(公告)日：2006-06-15

    申请号：US10908077

    申请日：2005-04-27

    申请人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Feng-Yuan Gan

    发明人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Feng-Yuan Gan

    IPC分类号： H01L31/0376 ,  H01L29/04

    CPC分类号： H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

    摘要： A thin film transistor is characterized by having an island-in structure having a semiconductor layer with a channel region, a bottom heavily-doped semiconductor layer, and a top heavily-doped semiconductor layer. The bottom heavily-doped semiconductor layer is positioned on two opposite sides of the surface of the semiconductor layer beyond the channel region. The top heavily-doped semiconductor layer, positioned on the bottom heavily-doped semiconductor layer, covers two opposite side walls of the bottom heavily-doped semiconductor layer and the semiconductor layer so that current leakage from the drain electrode to the source electrode is prevented.

    摘要翻译： 薄膜晶体管的特征在于具有岛状结构，其具有具有沟道区的半导体层，底部重掺杂半导体层和顶部重掺杂半导体层。 底部重掺杂半导体层位于超过沟道区的半导体层表面的相对两侧。 位于底部重掺杂半导体层上的顶部重掺杂半导体层覆盖底部重掺杂半导体层和半导体层的两个相对的侧壁，从而防止从漏电极到源电极的电流泄漏。

    Thin film transistor with source and drain separately formed from amorphus silicon region
    6.
    发明授权
    Thin film transistor with source and drain separately formed from amorphus silicon region 有权
    源极和漏极的薄膜晶体管分别由非晶硅区域形成

    公开(公告)号：US07701007B2

    公开(公告)日：2010-04-20

    申请号：US11393742

    申请日：2006-03-31

    申请人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Kuo-Yu Huang ,  Jen-Chien Peng

    发明人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Kuo-Yu Huang ,  Jen-Chien Peng

    IPC分类号： H01L27/12

    CPC分类号： H01L29/66765 ,  H01L27/124 ,  H01L27/1248

    摘要： A Thin Film Transistor comprises a gate electrode formed on a substrate; a gate insulation layer covering the gate electrode; an amorphous silicon (a-Si) region disposed on the gate insulation layer and above the gate electrode; a doped a-Si region formed on the a-Si region; the source and drain metal regions separately formed on the doped a-Si region and above the gate electrode, and isolated from the a-Si region; a passivation layer formed on the gate insulation layer and covering the source, drain and data-line (DL) metal regions; and a conductive layer formed on the passivation layer. The passivation layer has a first, second and third vias for respectively exposing the partial surfaces of the source, drain and DL metal regions. The first, second and third vias are filled with the conductive layer, so that the DL and source metal regions are connected via the conductive layer.

    摘要翻译： 薄膜晶体管包括形成在基板上的栅电极; 覆盖栅电极的栅极绝缘层; 设置在栅极绝缘层上和栅电极上方的非晶硅（a-Si）区; 形成在a-Si区上的掺杂a-Si区; 源极和漏极金属区域分别形成在掺杂的a-Si区域和栅电极上方，并与a-Si区域隔离; 形成在所述栅极绝缘层上并覆盖所述源极，漏极和数据线（DL）金属区域的钝化层; 以及形成在钝化层上的导电层。 钝化层具有用于分别暴露源极，漏极和DL金属区域的部分表面的第一，第二和第三通孔。 第一，第二和第三通孔填充有导电层，使得DL和源极金属区域经由导电层连接。

    Thin film transistor and method of manufacturing the same
    7.
    发明申请
    Thin film transistor and method of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20070052020A1

    公开(公告)日：2007-03-08

    申请号：US11393742

    申请日：2006-03-31

    申请人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Kuo-Yu Huang ,  Jen-Chien Peng

    发明人： Chi-Wen Chen ,  Ting-Chang Chang ,  Po-Tsun Liu ,  Kuo-Yu Huang ,  Jen-Chien Peng

    IPC分类号： H01L27/12

    CPC分类号： H01L29/66765 ,  H01L27/124 ,  H01L27/1248

    摘要： A Thin Film Transistor comprises a gate electrode formed on a substrate; a gate insulation layer covering the gate electrode; an amorphous silicon (a-Si) region disposed on the gate insulation layer and above the gate electrode; a doped a-Si region formed on the a-Si region; the source and drain metal regions separately formed on the doped a-Si region and above the gate electrode, and isolated from the a-Si region; a passivation layer formed on the gate insulation layer and covering the source, drain and data-line (DL) metal regions; and a conductive layer formed on the passivation layer. The passivation layer has a first, second and third vias for respectively exposing the partial surfaces of the source, drain and DL metal regions. The first, second and third vias are filled with the conductive layer, so that the DL and source metal regions are connected via the conductive layer.

    摘要翻译： 薄膜晶体管包括形成在基板上的栅电极; 覆盖栅电极的栅极绝缘层; 设置在栅极绝缘层上和栅电极上方的非晶硅（a-Si）区; 形成在a-Si区上的掺杂a-Si区; 源极和漏极金属区域分别形成在掺杂的a-Si区域和栅电极上方，并与a-Si区域隔离; 形成在所述栅极绝缘层上并覆盖所述源极，漏极和数据线（DL）金属区域的钝化层; 以及形成在钝化层上的导电层。 钝化层具有用于分别暴露源极，漏极和DL金属区域的部分表面的第一，第二和第三通孔。 第一，第二和第三通孔填充有导电层，使得DL和源极金属区域经由导电层连接。

    MEMORY CELL, PIXEL STRUCTURE AND MANUFACTURING PROCESS OF MEMORY CELL FOR DISPLAY PANELS
    8.
    发明申请
    MEMORY CELL, PIXEL STRUCTURE AND MANUFACTURING PROCESS OF MEMORY CELL FOR DISPLAY PANELS 审中-公开
    存储单元，显示面板存储单元的像素结构和制造过程

    公开(公告)号：US20070085115A1

    公开(公告)日：2007-04-19

    申请号：US11308612

    申请日：2006-04-12

    申请人： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Chi-Wen Chen ,  Ting-Chang Chang

    发明人： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Chi-Wen Chen ,  Ting-Chang Chang

    IPC分类号： H01L31/113 ,  H01L31/062 ,  H01L21/84 ,  H01L21/00

    CPC分类号： H01L27/1214 ,  H01L29/40117 ,  H01L29/66833

    摘要： A memory cell, suitable for being disposed on a substrate, comprises a poly-Si island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-Si island is disposed on the substrate and includes a source doped region, a drain doped region and a channel region there-between. The first dielectric layer is disposed on the poly-Si island, the trapping layer is disposed on the first dielectric layer, the second dielectric layer is disposed on the trapping layer and the control gate is disposed on the second dielectric layer. The above-described memory cell can be integrated into the manufacturing process of a low temperature polysilicon LCD panel (LTPS LCD panel) or an organic light emitting display panel (OLED panel).

    摘要翻译： 适用于设置在基板上的存储单元包括多晶硅岛，第一介电层，俘获层，第二介电层和控制栅。 多晶硅岛设置在衬底上，包括源极掺杂区，漏极掺杂区和其间的沟道区。 第一介电层设置在多晶硅岛上，俘获层设置在第一介电层上，第二介电层设置在俘获层上，控制栅设置在第二介质层上。 上述存储单元可以集成到低温多晶硅LCD面板（LTPS LCD面板）或有机发光显示面板（OLED面板）的制造过程中。

    Armature for permanent magnet brushed motor
    9.
    发明授权
    Armature for permanent magnet brushed motor 有权

    公开(公告)号：US10305340B2

    公开(公告)日：2019-05-28

    申请号：US15586265

    申请日：2017-05-03

    申请人： Chi-Wen Chen

    发明人： Chi-Wen Chen

    IPC分类号： H02K13/04 ,  H02K3/38 ,  H01R39/32

    摘要： An armature for a permanent magnet brushed motor includes a shaft, a number of silicon steel laminations circumferentially around the shaft, a commutator adjacent to an end of the shaft, and an enameled wire winding wound around the silicon steel laminations and the commutator. A plastic sleeve capable of withstanding high temperature is disposed between the commutator and the silicon steel laminations and adjacent to the commutator. A plastic member wraps around where the enameled wire winding winds the commutator, and fixedly attaching to the plastic sleeve. As such, the plastic member establishes a first point of attachment at where the enameled wire winding winds the commutator and a second point of attachment to the plastic sleeve. The problem of the enameled wire winding being loosed or broken due to the armature's high-speed rotation is prevented, thereby enhancing the motor's robustness and operational life.

    Pressure gauge device featuring setting for automatic supply and termination of pressure
    10.
    发明授权
    Pressure gauge device featuring setting for automatic supply and termination of pressure 有权
    压力表装置具有自动供应和终止压力的设置

    公开(公告)号：US09309990B2

    公开(公告)日：2016-04-12

    申请号：US14488306

    申请日：2014-09-17

    申请人： Chi-Wen Chen

    发明人： Chi-Wen Chen

    IPC分类号： G05D16/20 ,  F16K37/00 ,  G01D13/26

    CPC分类号： G05D16/2093 ,  G01D13/26 ,  G01L19/10 ,  G01L19/16 ,  Y10T137/7761 ,  Y10T137/8326

    摘要： Disclosed is a pressure gauge device featuring setting for automatic supply and termination of pressure, which includes a pressure gauge, a rotary knob, a rotary knob conductive piece, a rotary knob indicator, and a control device. The pressure gauge includes a hand sweep zone and an electrically conductive indication hand is arranged in the hand sweep zone. The pressure gauge includes a resetting conductive piece. The rotary knob is coupled to the rotary knob conductive piece and the rotary knob indicator and is set outside an outer circumference of the hand sweep zone of the pressure gauge. The resetting conductive piece and the rotary knob indicator are each set in the hand sweep zone and located on a rotation path of the indication hand. The resetting conductive piece and the rotary knob indicator are each in electrical connection with the control device.

    摘要翻译： 公开了一种压力计装置，其特征在于具有用于自动供应和终止压力的设置，其包括压力计，旋钮，旋钮导电片，旋钮指示器和控制装置。 压力计包括手扫区域，并且导电指示手布置在手扫区域中。 压力计包括复位导电片。 旋钮连接到旋钮导电片和旋钮指示器，并设置在压力计的手扫区域的外围。 复位导电片和旋钮指示器均设置在手动扫描区域中，并位于指示手的旋转路径上。 复位导电片和旋钮指示器各自与控制装置电连接。