发明授权
US07235823B2 Source side injection storage device with spacer gates and method therefor
有权
具有隔离栅的源侧注入存储装置及其方法
- 专利标题： Source side injection storage device with spacer gates and method therefor
- 专利标题（中）： 具有隔离栅的源侧注入存储装置及其方法
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申请号： US11536099申请日： 2006-09-28
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公开(公告)号： US07235823B2公开(公告)日： 2007-06-26
- 发明人: Cheong M. Hong , Gowrishankar L. Chindalore
- 申请人： Cheong M. Hong , Gowrishankar L. Chindalore
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Robert L. King; James L. Clingan, Jr.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A storage device structure (10) has two bits of storage per control gate (34) and uses source side injection (SSI) to provide lower programming current. A control gate (34) overlies a drain electrode formed by a doped region (22) that is positioned in a semiconductor substrate (12). Two select gates (49 and 50) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate (34). A source doped region (60) is positioned in the semiconductor substrate (12) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer (42) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.
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