发明授权
- 专利标题: Acoustic resonator device, filter device, manufacturing method for acoustic resonator device, and communication apparatus
- 专利标题(中): 声谐振器装置,滤波装置,声谐振器装置的制造方法以及通信装置
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申请号: US10991772申请日: 2004-11-18
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公开(公告)号: US07235915B2公开(公告)日: 2007-06-26
- 发明人: Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
- 申请人: Hiroyuki Nakamura , Keiji Onishi , Hiroshi Nakatsuka , Tomohiro Iwasaki
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: RatnerPrestia
- 优先权: JP2003-388362 20031118
- 主分类号: H01L41/04
- IPC分类号: H01L41/04 ; H01L41/08
摘要:
An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.
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