发明授权
- 专利标题： Non-volatile memory device with increased reliability
- 专利标题（中）： 非易失性存储器件具有更高的可靠性
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申请号： US11063560申请日： 2005-02-24
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公开(公告)号： US07238571B1公开(公告)日： 2007-07-03
- 发明人: Hirokazu Tokuno , Wenmei Li , Ning Cheng , Minh Van Ngo , Angela T. Hui , Cinti X. Chen
- 申请人： Hirokazu Tokuno , Wenmei Li , Ning Cheng , Minh Van Ngo , Angela T. Hui , Cinti X. Chen
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.,Spansion LLC
- 当前专利权人： Advanced Micro Devices, Inc.,Spansion LLC
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 代理机构： Harrity Snyder LLP
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L31/112
摘要：
A memory device may include a number of memory cells, a first interlayer dielectric formed over the memory cells and at least one metal layer formed over the interlayer dielectric. A dielectric layer may be formed over the metal layer. The dielectric layer may represent a cap layer formed at or near an upper surface of the memory device and may be deposited at a relatively low temperature.
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