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104 条记录 (耗时 0.027 秒)

    Film stacks to prevent UV-induced device damage
    2.
    发明授权
    Film stacks to prevent UV-induced device damage 有权
    电影堆叠以防止紫外线引起的设备损坏

    公开(公告)号：US07927723B1

    公开(公告)日：2011-04-19

    申请号：US11091524

    申请日：2005-03-29

    申请人： Angela T. Hui ,  Ning Cheng ,  Minh Van Ngo ,  Hirokazu Tokuno ,  Wenmei Li

    发明人： Angela T. Hui ,  Ning Cheng ,  Minh Van Ngo ,  Hirokazu Tokuno ,  Wenmei Li

    IPC分类号： G02B1/10 ,  G02B5/28 ,  B32B9/00 ,  B32B19/00

    CPC分类号： G02B5/208

    摘要： A film stack includes an interlayer dielectric formed over one or more devices. The film stack further includes a first layer having a high extinction coefficient formed on the interlayer dielectric and a second layer having a low extinction coefficient formed on the first layer. The first and second layers prevent ultraviolet induced damage to the one or more devices while minimizing reflectivity for lithographic processes.

    摘要翻译： 膜堆叠包括在一个或多个器件上形成的层间电介质。 薄膜叠层还包括形成在层间电介质上的具有高消光系数的第一层和形成在第一层上的具有低消光系数的第二层。 第一层和第二层防止对一种或多种设备的紫外线诱发的损坏，同时最小化光刻工艺的反射率。

    Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices
    4.
    发明授权
    Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices 有权
    单独使用BPTEOS ILD或BPTEOS ILD的薄的未掺杂TEOS来改善多位存储器件中的电荷损耗和接触电阻

    公开(公告)号：US07157335B1

    公开(公告)日：2007-01-02

    申请号：US10917562

    申请日：2004-08-13

    申请人： Ning Cheng ,  Minh Van Ngo ,  Hirokazu Tokuno ,  Lu You ,  Angela T. Hui ,  Yi He ,  Brian Mooney ,  Jean Yei-Mei Yang ,  Mark T. Ramsbey

    发明人： Ning Cheng ,  Minh Van Ngo ,  Hirokazu Tokuno ,  Lu You ,  Angela T. Hui ,  Yi He ,  Brian Mooney ,  Jean Yei-Mei Yang ,  Mark T. Ramsbey

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L27/11568

    摘要： The present invention facilitates dual bit memory devices and operation of dual bit memory device by providing systems and methods that employ a relatively thin undoped TEOS liner during fabrication, instead of a relatively thick TEOS layer that is conventionally used. Employment of the relatively thin liner facilitates dual bit memory device operation by mitigating charge loss and contact resistance while providing protection against unwanted dopant diffusion. The present invention includes utilizing a relatively thin undoped TEOS liner that is formed on wordlines and portions of a charge trapping dielectric layer. The relatively thin undoped TEOS liner is formed with a thickness of less than about 400 Angstroms so that contact resistance and charge loss are improved and yet providing suitable protection for operation of the device. Additionally, the present invention includes foregoing with an undoped TEOS liner altogether.

    摘要翻译： 本发明通过提供在制造期间使用相对薄的未掺杂TEOS衬垫的系统和方法而不是通常使用的相对较厚的TEOS层来便于双位存储器件和双位存储器件的操作。 使用相对薄的衬垫通过减轻电荷损失和接触电阻而提供双位存储器件操作，同时提供防止不期望的掺杂剂扩散的保护。 本发明包括利用形成在字线和电荷捕获电介质层的部分上的相对薄的未掺杂的TEOS衬垫。 相对薄的未掺杂的TEOS衬垫形成有小于约400埃的厚度，使得接触电阻和电荷损失得到改善，并且为器件的操作提供适当的保护。 此外，本发明包括前述的未掺杂的TEOS衬垫。

    Silicon containing material for patterning polymeric memory element
    10.
    发明授权
    Silicon containing material for patterning polymeric memory element 有权
    含硅材料用于图案化聚合物记忆元件

    公开(公告)号：US06803267B1

    公开(公告)日：2004-10-12

    申请号：US10614484

    申请日：2003-07-07

    申请人： Ramkumar Subramanian ,  Christopher F. Lyons ,  Matthew S. Buynoski ,  Patrick K. Cheung ,  Angela T. Hui ,  Ashok M. Khathuria ,  Sergey D. Lopatin ,  Minh Van Ngo ,  Jane V. Oglesby ,  Terence C. Tong ,  James J. Xie

    发明人： Ramkumar Subramanian ,  Christopher F. Lyons ,  Matthew S. Buynoski ,  Patrick K. Cheung ,  Angela T. Hui ,  Ashok M. Khathuria ,  Sergey D. Lopatin ,  Minh Van Ngo ,  Jane V. Oglesby ,  Terence C. Tong ,  James J. Xie

    IPC分类号： H01L21336

    CPC分类号： H01L27/28 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0018

    摘要： The present invention provides a method to fabricate an organic memory device, wherein the fabrication method includes forming a lower electrode, depositing a passive material over the surface of the lower electrode, applying an organic semiconductor material over the passive material, and operatively coupling the an upper electrode to the lower electrode through the organic semiconductor material and the passive material. Patterning of the organic semiconductor material is achieved by depositing a silicon-based resist over the organic semiconductor, irradiating portions of the silicon-based resist and patterning the silicon-based resist to remove the irradiated portions of the silicon-based resist. Thereafter, the exposed organic semiconductor can be patterned, and the non-irradiated silicon-based resist can be stripped to expose the organic semiconductor material that can be employed as a memory cell for single and multi-cell memory devices. A partitioning component can be integrated with the memory device to facilitate stacking memory devices and programming, reading, writing and erasing memory elements.

    摘要翻译： 本发明提供一种制造有机存储器件的方法，其中所述制造方法包括形成下电极，在所述下电极的表面上沉积无源材料，在所述被动材料上施加有机半导体材料，以及将所述有源半导体材料 上电极通过有机半导体材料和被动材料到下电极。 有机半导体材料的图案化是通过在有机半导体上沉积硅基抗蚀剂，照射硅基抗蚀剂的部分并图案化硅基抗蚀剂以除去硅基抗蚀剂的照射部分来实现的。 此后，可以对暴露的有机半导体进行构图，并且可以剥离未照射的硅基抗蚀剂以暴露可用作单电池和多电池存储器件的存储器单元的有机半导体材料。 分区组件可以与存储器件集成，以便于堆叠存储器件和编程，读取，写入和擦除存储器元件。