发明授权
- 专利标题： Deposition method, method of manufacturing semiconductor device, and semiconductor device
- 专利标题（中）： 沉积法，制造半导体器件的方法以及半导体器件
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申请号： US10867178申请日： 2004-06-15
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公开(公告)号： US07238629B2公开(公告)日： 2007-07-03
- 发明人: Yoshimi Shioya , Kazuo Maeda
- 申请人： Yoshimi Shioya , Kazuo Maeda
- 申请人地址： JP
- 专利权人： Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Bacon & Thomas, PLLC
- 优先权： JP2003-172395 20030617; JP2004-171399 20040609
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/469 ; H01L21/31
摘要：
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.
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