公开(公告)号：US07329612B2

公开(公告)日：2008-02-12

申请号：US10530730

申请日：2003-10-20

申请人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuhko Nishimoto ,  Kazuo Maeda

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L23/53295 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of H2O to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CH3 group to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film (62) on a substrate (61), plasmanizing a process gas containing at least any one of He, Ar, H2 or deuterium, and bringing the low-dielectric insulating film (62) into contact with the plasma of the process gas.

摘要翻译： 通过以下步骤制造半导体器件：通过将H 2 O 2的流量比设定为具有硅氧烷键的含硅有机化合物和含硅的有机化合物中的任何一种来生成成膜气体 具有CH 3 3〜4以上的有机化合物，将气体压力调节至1.5Torr以上，向成膜气体施加电力，生成等离子体，使其反应， 在基板（61）上形成低介电绝缘膜（62），使包含He，Ar，H 2或氘中的至少任何一种的工艺气体均质化，并使低介电绝缘层 膜（62）与工艺气体的等离子体接触。

公开(公告)号：US07238629B2

公开(公告)日：2007-07-03

申请号：US10867178

申请日：2004-06-15

申请人： Yoshimi Shioya ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kazuo Maeda

IPC分类号： H01L21/44 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02216 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122

摘要： The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

摘要翻译： 本发明涉及一种低介电常数绝缘膜的沉积方法，其包括以下步骤：产生包含至少一个硅源的第一沉积气体，其选自含有硅氧烷键的含硅有机化合物和含硅有机化合物 具有CH 3 3个基团的氧化剂和由具有烷氧基的含氧有机化合物（OR：O是氧而R是CH 3或C 2）组成的氧化剂， 向第一沉积气体施加电力以产生等离子体，然后引起反应，从而在衬底上形成低介电常数绝缘膜。

公开(公告)号：US06911405B2

公开(公告)日：2005-06-28

申请号：US09988685

申请日：2001-11-20

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

IPC分类号： H01L21/28 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/76 ,  H01L21/26 ,  H01L21/44

CPC分类号： H01L21/7685 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76886

摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

摘要翻译： 由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体 的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。 根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

公开(公告)号：US06852651B2

公开(公告)日：2005-02-08

申请号：US09967991

申请日：2001-10-02

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Kazuo Maeda

IPC分类号： C23C16/42 ,  C23C16/40 ,  C23C16/509 ,  H01L21/205 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/469

CPC分类号： H01L21/0214 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/76832 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及一种半导体器件，其中通过覆盖主要由铜膜制成的布线形成具有低介电常数的层间绝缘膜及其制造方法。 在半导体器件的制造中，通过将成膜气体转化为等离子体来反应，在基板上形成具有低介电常数的绝缘膜。 该方法包括通过将成膜气体以第一气体压力覆盖到等离子体中并在低压绝缘膜上形成高压绝缘膜，通过将成膜气体 在第二气体压力下，高于第一气体压力，进入等离子体和反应。

公开(公告)号：US20020028584A1

公开(公告)日：2002-03-07

申请号：US09903764

申请日：2001-07-13

申请人： CANON SALES CO., INC., SEMICONDUCTOR PROCESS LABORATORY CO., LTD.

发明人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant to cover a wiring. In construction, an insulating film for covering a wiring is formed on the substrate by plasmanizing a film forming gas, that consists of any one selected from a group consisting of alkoxy compound having SinullH bonds and siloxane having SinullH bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O, to react.

摘要翻译： 本发明涉及形成具有低介电常数以覆盖布线的层间绝缘膜的成膜方法。 在构造中，通过将由Si-H键的烷氧基化合物和具有Si-H键的硅氧烷组成的组中的任一种构成的成膜气体等离子体化，形成用于覆盖布线的绝缘膜， 选自O 2，N 2 O，NO 2，CO，CO 2和H 2 O的含氧气体进行反应。

公开(公告)号：US5231058A

公开(公告)日：1993-07-27

申请号：US628237

申请日：1990-12-14

申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuko Nishimoto

发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuko Nishimoto

IPC分类号： C23C16/40 ,  H01L21/316

CPC分类号： H01L21/02271 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/31612 ,  H01L21/31625

摘要： In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

公开(公告)号：US6133162A

公开(公告)日：2000-10-17

申请号：US897439

申请日：1997-07-21

申请人： Setsu Suzuki ,  Junichi Aoki ,  Kazuo Maeda

发明人： Setsu Suzuki ,  Junichi Aoki ,  Kazuo Maeda

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02068 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/31612

摘要： There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

摘要翻译： 提供了在形成有互连层等的基板101上通过热CVD法形成含硅绝缘膜等时使用的成膜预处理方法。 在绝缘膜沉积在衬底101上之前，将气态H 2 O质子化，然后将衬底101的表面暴露于这种质子化的H 2 O.

公开(公告)号：US6110814A

公开(公告)日：2000-08-29

申请号：US330052

申请日：1999-06-11

申请人： Noboru Tokumasu ,  Kazuo Maeda

发明人： Noboru Tokumasu ,  Kazuo Maeda

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76819 ,  C23C16/401 ,  C23C16/56 ,  H01L21/31051

摘要： The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.

摘要翻译： 本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。 该方法包括以下步骤：通过使用其中进行氧化的成膜气体，在基板206上形成含有P 2 O 3的含磷绝缘膜45a。 将气体加入到含有III价态的磷的含磷化合物的气体混合物中，其中氧与III价态的磷的至少一个键结合，并且含硅化合物，或者通过使用成膜气体从 除去氧化气体，同时加热含磷绝缘膜45a，同时对绝缘膜45a施加加速度，使绝缘膜流化，从而使绝缘膜45b的表面平坦化，同时绝缘膜45a具有预定的粘度，并进一步加热 绝缘膜45b的表面之后的绝缘膜45b被平坦化，以使绝缘膜45b中的P2O3升华，从而固化绝缘膜45b。

公开(公告)号：US5915200A

公开(公告)日：1999-06-22

申请号：US842425

申请日：1997-04-24

申请人： Noboru Tokumasu ,  Kazuo Maeda

发明人： Noboru Tokumasu ,  Kazuo Maeda

IPC分类号： H01L21/768 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L21/443

CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31625

摘要： A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.

摘要翻译： 提供一种成膜方法，用于形成用于覆盖半导体集成电路器件的互连层等的平面化层间绝缘膜。 在将含有III价磷和至少一个磷键的含磷化合物的反应气体供给到氧的同时，在沉积基板上形成包含P 2 O 3的含硅绝缘膜，从而大大降低了用于平坦化的流化温度。

公开(公告)号：US5387546A

公开(公告)日：1995-02-07

申请号：US902095

申请日：1992-06-22

申请人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuko Nishimoto

发明人： Kazuo Maeda ,  Noboru Tokumasu ,  Yuko Nishimoto

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/00 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/306

CPC分类号： H01L21/67115 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76826 ,  Y10S148/003 ,  Y10S148/004 ,  Y10S148/09 ,  Y10S148/093

摘要： The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其包括通过低温CVD法形成的绝缘膜的重整方法。 本发明的目的是提供一种半导体器件的制造方法，该半导体器件能够提高能够在低温下形成膜并且还能够保持质量生产率的通过CVD法形成的绝缘膜的膜质量 包括在通过化学气相沉积法形成的主体上形成绝缘膜（4）之后，通过在绝缘膜的紫外线照射下进行加热而加热膜的处理。