Invention Grant
- Patent Title: Deposition method, method of manufacturing semiconductor device, and semiconductor device
- Patent Title (中): 沉积法，制造半导体器件的方法以及半导体器件
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Application No.: US10867178Application Date: 2004-06-15
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Publication No.: US07238629B2Publication Date: 2007-07-03
- Inventor: Yoshimi Shioya , Kazuo Maeda
- Applicant: Yoshimi Shioya , Kazuo Maeda
- Applicant Address: JP
- Assignee: Semiconductor Process Laboratory Co., Ltd.
- Current Assignee: Semiconductor Process Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Bacon & Thomas, PLLC
- Priority: JP2003-172395 20030617; JP2004-171399 20040609
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/469 ; H01L21/31
Abstract:
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.
Public/Granted literature
- US20050014391A1 Deposition method, method of manufacturing semiconductor device, and semiconductor device Public/Granted day:2005-01-20
Information query
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