发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10971098申请日： 2004-10-25
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公开(公告)号： US07238970B2公开(公告)日： 2007-07-03
- 发明人: Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
- 申请人： Yutaka Hirose , Tsuyoshi Tanaka , Yasuhiro Uemoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-370407 20031030
- 主分类号： H01L29/732
- IPC分类号： H01L29/732
摘要：
A semiconductor device of the present invention comprises a Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity and at least one ohmic electrode formed on the Group III-V nitride semiconductor layer of gallium nitride or the like having n-type conductivity. The ohmic electrode is formed of a conductive material containing a metal boride.
公开/授权文献
- US20050093098A1 Semiconductor device and method for fabricating the same 公开/授权日：2005-05-05
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