Invention Grant
US07241694B2 Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
有权
一种在碳化硅半导体衬底中制造具有沟槽的半导体器件的方法
- Patent Title: Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
- Patent Title (中): 一种在碳化硅半导体衬底中制造具有沟槽的半导体器件的方法
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Application No.: US11105587Application Date: 2005-04-14
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Publication No.: US07241694B2Publication Date: 2007-07-10
- Inventor: Yuuichi Takeuchi , Rajesh Kumar Malhan , Hiroyuki Matsunami , Tsunenobu Kimoto
- Applicant: Yuuichi Takeuchi , Rajesh Kumar Malhan , Hiroyuki Matsunami , Tsunenobu Kimoto
- Applicant Address: JP Kariya
- Assignee: DENSO Corporation
- Current Assignee: DENSO Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2004-118890 20040414; JP2004-193459 20040630; JP2004-193460 20040630
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/302 ; H01L21/308
Abstract:
A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a trench slanting angle equal to or larger than 80 degrees is formed; and removing a damage portion in such a manner that the damage portion disposed on an inner surface of the trench formed in the semiconductor substrate in the step of forming the trench is etched and removed in hydrogen atmosphere under decompression pressure at a temperature equal to or higher than 1600° C.
Public/Granted literature
- US20050233539A1 Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate Public/Granted day:2005-10-20
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