发明授权
- 专利标题： Non-volatile memory
- 专利标题（中）： 非易失性存储器
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申请号： US11180080申请日： 2005-07-11
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公开(公告)号： US07242052B2公开(公告)日： 2007-07-10
- 发明人: Ming-Chang Kuo , Chao-I Wu
- 申请人： Ming-Chang Kuo , Chao-I Wu
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 优先权： TW94112669A 20050421
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A stacked structure is formed over a substrate, and the stacked structure has a gate dielectric layer and a floating gate thereon. A first dielectric layer, a second dielectric layer and a third dielectric layer are respectively formed over the top and the sidewalls of the stacked structure and the exposed substrate. A charge storage layer covers over the top and sidewalls of the stacked structure. Also, a pair of auxiliary gates is formed over the substrate beside the charge storage layer, and a gap is between the auxiliary gates and the charge storage layer.
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