TOUCH PANEL AND INPUT SWITCHING METHOD
    1.
    发明申请
    TOUCH PANEL AND INPUT SWITCHING METHOD 审中-公开
    触摸面板和输入开关方法

    公开(公告)号:US20130314322A1

    公开(公告)日:2013-11-28

    申请号:US13563762

    申请日:2012-08-01

    IPC分类号: G06F3/041 G06F3/02

    摘要: A touch panel includes a transparent sheet with a keyboard layout pattern formed thereon, a touch display panel, a processor and at least two input modules. The input modules are chosen from the group consisting of a keyboard input module, a handwriting input module and a touch input module. The processor includes a touch operation recognition module, a determining module and a switching module. The touch operation recognition module identifies touch pattern on the touch panel. The determining module compares the touch pattern identified by the touch operation recognition module to preset touch pattern(s) and generates commands according to the comparison result. The switching module receives the command from the determining module and actives a corresponding input module.

    摘要翻译: 触摸面板包括其上形成有键盘布局图案的透明薄片,触摸显示面板,处理器和至少两个输入模块。 输入模块从由键盘输入模块,手写输入模块和触摸输入模块组成的组中选择。 处理器包括触摸操作识别模块,确定模块和切换模块。 触摸操作识别模块识别触摸面板上的触摸图案。 确定模块将由触摸操作识别模块识别的触摸模式与预设的触摸模式进行比较,并根据比较结果生成命令。 交换模块从确定模块接收命令并激活相应的输入模块。

    Electronic apparatus
    2.
    发明授权
    Electronic apparatus 失效
    电子仪器

    公开(公告)号:US08523370B2

    公开(公告)日:2013-09-03

    申请号:US12880153

    申请日:2010-09-13

    IPC分类号: G03B21/28

    摘要: An electronic apparatus includes a main body and a projection mechanism. The main body is used for providing video signals. The projection mechanism includes a built-in mini-projector that can either be stored in the electronic apparatus or extended out of the electronic apparatus for use. The mini-projector is capable of receiving video signals and projecting corresponding images when the projection mechanism is extended, and stops the projection of images when retracted.

    摘要翻译: 电子设备包括主体和投影机构。 主体用于提供视频信号。 投影机构包括内置的微型投影仪,其可以存储在电子设备中或者延伸出电子设备以供使用。 当投影机构延伸时,小型投影机能够接收视频信号并投影相应的图像,并且缩回时停止投影图像。

    Method of making a relay
    3.
    发明授权
    Method of making a relay 有权
    制造继电器的方法

    公开(公告)号:US07996985B2

    公开(公告)日:2011-08-16

    申请号:US11938981

    申请日:2007-11-13

    申请人: Ming-Chang Kuo

    发明人: Ming-Chang Kuo

    IPC分类号: H01F7/127 H01R43/20

    摘要: A method of making a relay includes: preparing a relay core member; coupling first, second and third terminals to the relay core member by moving the same horizontally relative to the relay core member such that terminal portions of the first, second and third terminals enter notches formed in the relay core member in a horizontal direction; and enclosing the relay core member, the first terminal, the second terminal, and the third terminal within a housing, and sealing the housing with resin.

    摘要翻译: 制造继电器的方法包括:准备中继铁芯构件; 通过使第一,第二和第三端子相对于继电器芯构件水平移动而将第一,第二和第三端子耦合到继电器芯构件,使得第一,第二和第三端子的端子部分在水平方向上进入形成在中继铁芯构件中的凹口; 并且在壳体内包围中继铁心构件,第一端子,第二端子和第三端子,并且用树脂密封壳体。

    Method and apparatus for operating nonvolatile memory with floating voltage at one of the source and drain regions
    4.
    发明授权
    Method and apparatus for operating nonvolatile memory with floating voltage at one of the source and drain regions 有权
    用于在源极和漏极区域中的一个处工作具有浮动电压的非易失性存储器的方法和装置

    公开(公告)号:US07916550B2

    公开(公告)日:2011-03-29

    申请号:US11560971

    申请日:2006-11-17

    申请人: Ming-Chang Kuo

    发明人: Ming-Chang Kuo

    IPC分类号: G11C11/34

    CPC分类号: G11C16/0475

    摘要: Methods and apparatuses are discussed which operate a nonvolatile memory cell or at least one cell in an array of such cells, such that a drain region or a source region is floating while adding charge to the charge storage structure.

    摘要翻译: 讨论了操作非易失性存储器单元或这种单元的阵列中的至少一个单元的方法和装置,使得漏极区域或源极区域在向电荷存储结构增加电荷的同时浮动。

    TEST STRUCTURE AND METHOD FOR DETECTING CHARGE EFFECTS DURING SEMICONDUCTOR PROCESSING
    5.
    发明申请
    TEST STRUCTURE AND METHOD FOR DETECTING CHARGE EFFECTS DURING SEMICONDUCTOR PROCESSING 有权
    用于检测半导体加工过程中充电效应的测试结构和方法

    公开(公告)号:US20100221851A1

    公开(公告)日:2010-09-02

    申请号:US12777858

    申请日:2010-05-11

    IPC分类号: H01L21/66

    摘要: A semiconductor process test structure comprises an electrode, a charge-trapping layer, and a diffusion region. The test structure is a capacitor-like structure in which the charge-trapping layer will trap charges during various processing steps. Gate-induced drain leakage (GIDL) measurement techniques can then be used to characterize the charging status of the test structure.

    摘要翻译: 半导体工艺测试结构包括电极,电荷俘获层和扩散区域。 测试结构是电容器状结构,其中电荷捕获层将在各种处理步骤期间捕获电荷。 然后可以使用栅极漏极泄漏(GIDL)测量技术来表征测试结构的充电状态。

    THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    三维半导体结构及其制造方法

    公开(公告)号:US20100208503A1

    公开(公告)日:2010-08-19

    申请号:US12372860

    申请日:2009-02-18

    申请人: Ming-Chang Kuo

    发明人: Ming-Chang Kuo

    摘要: A three-dimensional (3D) semiconductor structure with high density and method of fabricating the same are disclosed. The 3D semiconductor structure comprises at least a first memory cell and a second memory cell stacked on the first memory cell. The first memory cell comprises a first conductive line and a second conductive line. The second memory cell comprises another first conductive line opposite to the first conductive line of the first memory cell, and the second conductive line formed between said two first conductive lines of the first and second memory cells. The first and second memory cells share the second conductive line when the 3D semiconductor structure is programming and erasing, and each of the first and second memory cells has a diode.

    摘要翻译: 公开了一种具有高密度的三维(3D)半导体结构及其制造方法。 3D半导体结构包括至少第一存储单元和堆叠在第一存储单元上的第二存储单元。 第一存储单元包括第一导线和第二导线。 第二存储单元包括与第一存储单元的第一导线相对的另一第一导线,以及形成在第一和第二存储单元的所述两个第一导线之间的第二导线。 当3D半导体结构编程和擦除时,第一和第二存储单元共享第二导线,并且第一和第二存储单元中的每一个具有二极管。

    MEMORY DEVICES
    7.
    发明申请
    MEMORY DEVICES 有权
    内存设备

    公开(公告)号:US20100176436A1

    公开(公告)日:2010-07-15

    申请号:US12730266

    申请日:2010-03-24

    申请人: Ming-Chang Kuo

    发明人: Ming-Chang Kuo

    IPC分类号: H01L29/788

    摘要: A memory device is provided. The memory device includes a first control gate, a second control gate, a plurality of first charge storage elements, a plurality of second charge storage elements and a semiconductor. The plurality of first charge storage elements is beside the first control gate, and each of the first charge storage elements is located on the different side of the first control gate. The plurality of second charge storage elements is beside the second control gate. The semiconductor is located between the first and second control gates.

    摘要翻译: 提供存储器件。 存储器件包括第一控制栅极,第二控制栅极,多个第一电荷存储元件,多个第二电荷存储元件和半导体。 多个第一电荷存储元件位于第一控制栅极旁边,并且每个第一电荷存储元件位于第一控制栅极的不同侧。 多个第二电荷存储元件位于第二控制栅极旁边。 半导体位于第一和第二控制门之间。

    Fabrication method of non-volatile memory
    8.
    发明授权
    Fabrication method of non-volatile memory 有权
    非易失性存储器的制作方法

    公开(公告)号:US07732256B2

    公开(公告)日:2010-06-08

    申请号:US11614086

    申请日:2006-12-21

    申请人: Ming-Chang Kuo

    发明人: Ming-Chang Kuo

    摘要: A method of fabrication a non-volatile memory is provided. A stacked structure is formed on a substrate, the stacked structure including a gate dielectric layer and a control gate. Then, a first dielectric layer, a second dielectric layer and a third dielectric layer are respectively formed on the top and sidewalls of the stacked structure and the exposed substrate. Thereafter, a pair of charge storage layers are formed over the substrate to respectively cover a portion of the top and sidewalls of the stacked structure, and a gap exists between each of the charge storage layers.

    摘要翻译: 提供了制造非易失性存储器的方法。 堆叠结构形成在基板上,层叠结构包括栅极电介质层和控制栅极。 然后,分别在层叠结构的顶部和侧壁和暴露的基板上分别形成第一电介质层,第二电介质层和第三电介质层。 此后,在衬底上形成一对电荷存储层,以分别覆盖层叠结构的顶部和侧壁的一部分,并且每个电荷存储层之间存在间隙。

    ELECTROMAGNETIC RELAY
    9.
    发明申请
    ELECTROMAGNETIC RELAY 有权
    电磁继电器

    公开(公告)号:US20100117769A1

    公开(公告)日:2010-05-13

    申请号:US12432152

    申请日:2009-04-29

    申请人: Ming-Chang KUO

    发明人: Ming-Chang KUO

    IPC分类号: H01H51/00

    摘要: An electromagnetic relay includes: a casing formed with an opening; a relay core member adapted for generating an electromagnetic field and inserted into the casing through the opening; an actuating set that is inserted into the relay core member, that is exposed from the casing, and that can be driven by a magnetic attraction force attributed to the electromagnetic field; a terminal set disposed on the casing and adapted to be actuated by the actuating set to thereby act as a switch mechanism; and a housing accommodating the casing, the relay core member, the actuating set and the terminal set.

    摘要翻译: 电磁继电器包括:形成有开口的壳体; 继电器芯构件,其适于产生电磁场并通过所述开口插入所述壳体中; 驱动组件,其从所述壳体露出并插入到所述继电器芯构件中,并且可以由归因于所述电磁场的磁吸引力驱动; 端子组,其设置在所述壳体上并且适于由所述致动装置致动,从而用作开关机构; 以及容纳壳体,中继铁芯构件,致动组和端子组的壳体。

    Method of operating multi-level cell and integrate circuit for using multi-level cell to store data
    10.
    发明授权
    Method of operating multi-level cell and integrate circuit for using multi-level cell to store data 有权
    操作多级单元的方法和使用多级单元存储数据的集成电路

    公开(公告)号:US07570514B2

    公开(公告)日:2009-08-04

    申请号:US11625456

    申请日:2007-01-22

    IPC分类号: G11C16/04

    摘要: A method of operating a multi-level cell is provided. The method includes the following the steps. (a) The multi-level cell is operated until a threshold voltage is larger than a pre-programming threshold voltage. And (b) the multi-level cell is operated until the threshold voltage is larger than a target programming threshold voltage and smaller than the pre-programming threshold voltage. Moreover, between the step (a) and the step (b), further comprises (c) A first verification step is performed. If the threshold voltage is smaller than the pre-programming threshold voltage, then repeat the step (a). Furthermore, after the step (b), further comprises (d) a second verification step is performed. If the threshold voltage is larger than the pre-programming threshold voltage, repeat the step (b), and if the threshold voltage is smaller than the target programming threshold voltage, repeat the steps (a)-(d).

    摘要翻译: 提供了一种操作多级单元的方法。 该方法包括以下步骤。 (a)操作多电平电池,直到阈值电压大于预编程阈值电压。 和(b)多电平电池被操作直到阈值电压大于目标编程阈值电压并且小于预编程阈值电压。 此外,在步骤(a)和步骤(b)之间还包括(c)执行第一验证步骤。 如果阈值电压小于预编程阈值电压,则重复步骤(a)。 此外,在步骤(b)之后还包括(d)执行第二验证步骤。 如果阈值电压大于预编程阈值电压,则重复步骤(b),如果阈值电压小于目标编程阈值电压,则重复步骤(a) - (d)。