摘要:
A touch panel includes a transparent sheet with a keyboard layout pattern formed thereon, a touch display panel, a processor and at least two input modules. The input modules are chosen from the group consisting of a keyboard input module, a handwriting input module and a touch input module. The processor includes a touch operation recognition module, a determining module and a switching module. The touch operation recognition module identifies touch pattern on the touch panel. The determining module compares the touch pattern identified by the touch operation recognition module to preset touch pattern(s) and generates commands according to the comparison result. The switching module receives the command from the determining module and actives a corresponding input module.
摘要:
An electronic apparatus includes a main body and a projection mechanism. The main body is used for providing video signals. The projection mechanism includes a built-in mini-projector that can either be stored in the electronic apparatus or extended out of the electronic apparatus for use. The mini-projector is capable of receiving video signals and projecting corresponding images when the projection mechanism is extended, and stops the projection of images when retracted.
摘要:
A method of making a relay includes: preparing a relay core member; coupling first, second and third terminals to the relay core member by moving the same horizontally relative to the relay core member such that terminal portions of the first, second and third terminals enter notches formed in the relay core member in a horizontal direction; and enclosing the relay core member, the first terminal, the second terminal, and the third terminal within a housing, and sealing the housing with resin.
摘要:
Methods and apparatuses are discussed which operate a nonvolatile memory cell or at least one cell in an array of such cells, such that a drain region or a source region is floating while adding charge to the charge storage structure.
摘要:
A semiconductor process test structure comprises an electrode, a charge-trapping layer, and a diffusion region. The test structure is a capacitor-like structure in which the charge-trapping layer will trap charges during various processing steps. Gate-induced drain leakage (GIDL) measurement techniques can then be used to characterize the charging status of the test structure.
摘要:
A three-dimensional (3D) semiconductor structure with high density and method of fabricating the same are disclosed. The 3D semiconductor structure comprises at least a first memory cell and a second memory cell stacked on the first memory cell. The first memory cell comprises a first conductive line and a second conductive line. The second memory cell comprises another first conductive line opposite to the first conductive line of the first memory cell, and the second conductive line formed between said two first conductive lines of the first and second memory cells. The first and second memory cells share the second conductive line when the 3D semiconductor structure is programming and erasing, and each of the first and second memory cells has a diode.
摘要:
A memory device is provided. The memory device includes a first control gate, a second control gate, a plurality of first charge storage elements, a plurality of second charge storage elements and a semiconductor. The plurality of first charge storage elements is beside the first control gate, and each of the first charge storage elements is located on the different side of the first control gate. The plurality of second charge storage elements is beside the second control gate. The semiconductor is located between the first and second control gates.
摘要:
A method of fabrication a non-volatile memory is provided. A stacked structure is formed on a substrate, the stacked structure including a gate dielectric layer and a control gate. Then, a first dielectric layer, a second dielectric layer and a third dielectric layer are respectively formed on the top and sidewalls of the stacked structure and the exposed substrate. Thereafter, a pair of charge storage layers are formed over the substrate to respectively cover a portion of the top and sidewalls of the stacked structure, and a gap exists between each of the charge storage layers.
摘要:
An electromagnetic relay includes: a casing formed with an opening; a relay core member adapted for generating an electromagnetic field and inserted into the casing through the opening; an actuating set that is inserted into the relay core member, that is exposed from the casing, and that can be driven by a magnetic attraction force attributed to the electromagnetic field; a terminal set disposed on the casing and adapted to be actuated by the actuating set to thereby act as a switch mechanism; and a housing accommodating the casing, the relay core member, the actuating set and the terminal set.
摘要:
A method of operating a multi-level cell is provided. The method includes the following the steps. (a) The multi-level cell is operated until a threshold voltage is larger than a pre-programming threshold voltage. And (b) the multi-level cell is operated until the threshold voltage is larger than a target programming threshold voltage and smaller than the pre-programming threshold voltage. Moreover, between the step (a) and the step (b), further comprises (c) A first verification step is performed. If the threshold voltage is smaller than the pre-programming threshold voltage, then repeat the step (a). Furthermore, after the step (b), further comprises (d) a second verification step is performed. If the threshold voltage is larger than the pre-programming threshold voltage, repeat the step (b), and if the threshold voltage is smaller than the target programming threshold voltage, repeat the steps (a)-(d).