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发明授权
US07242602B2 Semiconductor memory devices having conductive line in twisted areas of twisted bit line pairs 失效
半导体存储器件在绞合位线对的扭转区域具有导线

Semiconductor memory devices having conductive line in twisted areas of twisted bit line pairs
摘要：
A semiconductor memory device includes spaced apart twisted bit line pairs, a respective one of which includes a spaced apart twisted area. A conductive line overlaps the respective twisted areas of the spaced apart twisted line pairs. The conductive line can extend parallel to the memory device word lines, and can provide a power supply ground and/or signal line.
摘要（中）：

半导体存储器件包括间隔开的扭曲位线对，其相应的一个包括间隔开的扭曲区域。 导线与间隔开的扭绞线对的相应扭曲区域重叠。 导线可以平行于存储器件字线延伸，并且可以提供电源接地和/或信号线。

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