发明授权
US07244336B2 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
有权
用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件
- 专利标题: Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
- 专利标题(中): 用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件
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申请号: US10736666申请日: 2003-12-17
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公开(公告)号: US07244336B2公开(公告)日: 2007-07-17
- 发明人: Andreas Fischer , Peter Loewenhardt
- 申请人: Andreas Fischer , Peter Loewenhardt
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Buchanan Ingersoll & Rooney PC
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
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