发明授权
- 专利标题： Semiconductor device using a conductive film and method of manufacturing the same
- 专利标题（中）： 使用导电膜的半导体装置及其制造方法
-
申请号： US11487969申请日： 2006-07-18
-
公开(公告)号： US07244982B2公开(公告)日： 2007-07-17
- 发明人: Shinya Natsume , Shinichiro Hayashi
- 申请人： Shinya Natsume , Shinichiro Hayashi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-271834 20030708; JP2003-281443 20030729
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.
公开/授权文献
信息查询
IPC分类:
