发明授权
US07245459B2 Critically exposed lapping of magnetic sensors for target signal output
有权
严重暴露的磁传感器研磨目标信号输出
- 专利标题: Critically exposed lapping of magnetic sensors for target signal output
- 专利标题(中): 严重暴露的磁传感器研磨目标信号输出
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申请号: US10955570申请日: 2004-09-30
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公开(公告)号: US07245459B2公开(公告)日: 2007-07-17
- 发明人: Marie-Claire Cyrille , Ching Hwa Tsang , Huey-Ming Tzeng
- 申请人: Marie-Claire Cyrille , Ching Hwa Tsang , Huey-Ming Tzeng
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands BV
- 当前专利权人: Hitachi Global Storage Technologies Netherlands BV
- 当前专利权人地址: NL Amsterdam
- 代理机构: Bracewell & Giuliani LLP
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; B24B249/00
摘要:
Magnetic sensors are fabricated with an initial length that is slightly longer than their finished length. The sensors are then critically lapped and exposed for target signal output. The final target length of the sensors is obtained by first exposing the sensors to a photolithographic process and then directly lapping the excess length from the sensors. The length of sensor material that is removed is in the range of several nanometers. The target end point during lapping may be ascertained by detecting the change in resistance between the sensor and leads in the lapping tool as the excess material is lapped from the sensor.
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