Invention Grant
US07247915B2 Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
有权
钴/镍双层硅化物工艺，用于非常窄的多晶硅栅极技术
- Patent Title: Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
- Patent Title (中): 钴/镍双层硅化物工艺，用于非常窄的多晶硅栅极技术
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Application No.: US11375778Application Date: 2006-03-15
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Publication No.: US07247915B2Publication Date: 2007-07-24
- Inventor: Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
- Applicant: Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW
- Agency: Duane Morrris, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062
Abstract:
A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.
Public/Granted literature
- US20060157800A1 Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology Public/Granted day:2006-07-20
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