发明授权
US07247915B2 Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
有权
钴/镍双层硅化物工艺，用于非常窄的多晶硅栅极技术
- 专利标题： Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
- 专利标题（中）： 钴/镍双层硅化物工艺，用于非常窄的多晶硅栅极技术
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申请号： US11375778申请日： 2006-03-15
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公开(公告)号： US07247915B2公开(公告)日： 2007-07-24
- 发明人: Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
- 申请人： Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW
- 代理机构： Duane Morrris, LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062
摘要：
A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.
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