Invention Grant
- Patent Title: Inductor and capacitor formed of build-up vias
- Patent Title (中): 由积聚通孔形成的电感和电容器
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Application No.: US11186859Application Date: 2005-07-22
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Publication No.: US07248134B2Publication Date: 2007-07-24
- Inventor: Sung-Mao Wu , Chi-Tsung Chiu , Chih-Pin Hung
- Applicant: Sung-Mao Wu , Chi-Tsung Chiu , Chih-Pin Hung
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering Inc.
- Current Assignee: Advanced Semiconductor Engineering Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW93134636A 20041112
- Main IPC: H01P3/08
- IPC: H01P3/08

Abstract:
An inductor and capacitor implemented with build-up vias. The inductor and capacitor comprise a conductor plane, a dielectric layer, an inductor/capacitor inducing build-up via and a conductor layer. There is a conducting material in the inductor/capacitor inducing build-up via and a fist end thereof is in contact with the conductor plane. The length of the inductor inducing build-up via is larger than one fourth of a signal wavelength while the length of the conductor inducing build-up via is smaller than one fourth of a signal wavelength.
Public/Granted literature
- US20060103483A1 Inductor and capacitor formed of build-up vias Public/Granted day:2006-05-18
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