Invention Grant
- Patent Title: Capacitor of a memory device and fabrication method thereof
- Patent Title (中): 存储器件的电容器及其制造方法
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Application No.: US11120184Application Date: 2005-05-03
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Publication No.: US07250649B2Publication Date: 2007-07-31
- Inventor: Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
- Applicant: Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2004-0030928 20040503
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
Public/Granted literature
- US20060001070A1 Capacitor of a memory device and fabrication method thereof Public/Granted day:2006-01-05
Information query
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