发明授权
- 专利标题： Nitrogen sources for molecular beam epitaxy
- 专利标题（中）： 用于分子束外延的氮源
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申请号： US10233625申请日： 2002-09-04
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公开(公告)号： US07255746B2公开(公告)日： 2007-08-14
- 发明人: Ralph H. Johnson , Jin K. Kim , James K. Guenter
- 申请人： Ralph H. Johnson , Jin K. Kim , James K. Guenter
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Workman Nydegger
- 主分类号： C30B25/12
- IPC分类号： C30B25/12 ; C30B25/14
摘要：
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.
公开/授权文献
- US20040040495A1 Nitrogen sources for molecular beam epitaxy 公开/授权日：2004-03-04