发明授权
- 专利标题: Methods for fabricating three-dimensional all organic interconnect structures
- 专利标题(中): 制造三维全有机互连结构的方法
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申请号: US10402315申请日: 2003-03-28
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公开(公告)号: US07260890B2公开(公告)日: 2007-08-28
- 发明人: George E. White , Madhavan Swaminathan , Venkatesh Sundaram , Sidharth Dalmia
- 申请人: George E. White , Madhavan Swaminathan , Venkatesh Sundaram , Sidharth Dalmia
- 申请人地址: US GA Atlanta
- 专利权人: Georgia Tech Research Corporation
- 当前专利权人: Georgia Tech Research Corporation
- 当前专利权人地址: US GA Atlanta
- 代理机构: Sutherland Asbill & Brennan LLP
- 主分类号: H05K3/36
- IPC分类号: H05K3/36
摘要:
The present invention includes methods for making liquid crystalline polymer (LCP) interconnect structures using a high temperature and low temperature single sided liquid crystalline polymer LCP where both the high and low temperature LCP are drilled to form a z-axis connection. The single sided conductive layer is a bus layer to form z axis conductive stud within the high and low temperature LCP, followed by a metallic capping layer of the stud that serves as the bonding metal between the conductive interconnects to form the z-axis connection. High and low temperature LCP layers are etched or built up to form circuit patterns and subsequently bonded together to form final multilayer circuit pattern where the low temperature LCP melts to form both dielectric to dielectric bond to high temperature LCP circuit layer, and dielectric to conductive bond, whereas metal to metal bonding occurs with high temperature metal capping layer bonding to conductive metal layer.
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