发明授权
US07262450B2 MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device
失效
MFS型场效应晶体管，其制造方法，铁电存储器和半导体器件
- 专利标题： MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device
- 专利标题（中）： MFS型场效应晶体管，其制造方法，铁电存储器和半导体器件
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申请号： US11108933申请日： 2005-04-19
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公开(公告)号： US07262450B2公开(公告)日： 2007-08-28
- 发明人: Takeshi Kijima , Yasuaki Hamada
- 申请人： Takeshi Kijima , Yasuaki Hamada
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2004-128692 20040423
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A MFS type field effect transistor includes a semiconductor layer, a PZT system ferroelectric layer formed on the semiconductor layer, a gate electrode formed on the PZT system ferroelectric layer, and an impurity layer composing a source or a drain, formed in the semiconductor layer. The PZT system ferroelectric layer includes Nb that replaces a Ti composition by 2.5 mol % or more but 40 mol % or less.
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