发明授权
- 专利标题: Process for treating a substrate with a plasma
- 专利标题(中): 用等离子体处理衬底的方法
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申请号: US09412510申请日: 1999-10-05
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公开(公告)号: US07264850B1公开(公告)日: 2007-09-04
- 发明人: Kenji Itoh , Shigenori Hayashi
- 申请人: Kenji Itoh , Shigenori Hayashi
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP4-360193 19921228; JP4-360194 19921228
- 主分类号: B05D5/08
- IPC分类号: B05D5/08 ; B05D5/00 ; B05D1/36 ; C23C16/26 ; C23C16/50 ; H05H1/24 ; H05H1/02 ; C23C16/27 ; C23C16/105 ; H05H1/46
摘要:
A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through said plasma region. Also claimed is an apparatus for fabricating a magnetic recording medium by sequentially and continuously forming a magnetic layer and a diamond-like carbon film on a polymer substrate material, which comprises at least a first vacuum vessel for forming the magnetic layer of the magnetic recording medium and a second vacuum vessel for forming the diamond-like carbon film, provided that the pressure difference between the operation pressures for the first vessel and the second vessel is set in the range of from 10−2 to 10−5 Torr.
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